Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets
Identifieur interne : 016643 ( Main/Repository ); précédent : 016642; suivant : 016644Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets
Auteurs : RBID : Pascal:99-0024924Descripteurs français
- Pascal (Inist)
- Photoluminescence, Discontinuité bande, Structure bande, Forme en S, Impureté, Centre accepteur, Interface solide solide, Dépendance température, Equation Poisson, Equation Schrödinger, Autocohérence, Modèle thermodynamique, Indium phosphure, Aluminium arséniure, Composé ternaire, Composé binaire, Etude expérimentale, 7855C, 7866F, AlInAs, Al As In, InP, IN P.
English descriptors
- KwdEn :
- Acceptor center, Aluminium arsenides, Band offset, Band structure, Binary compounds, Experimental study, Impurities, Indium phosphides, Photoluminescence, Poisson equation, S shape, Schroedinger equation, Self consistency, Solid-solid interfaces, Temperature dependence, Ternary compounds, Thermodynamic model.
Abstract
The temperature variations of the AlInAs photoluminescence (PL) transition energies and the AlInAs/InP interface staggered lineup luminescence (SLL) energy are reported. The S shape appearing from 4 to 90 K on the energy v. temperature curves of these PL energies are owing to extrinsic recombinations. In particular, the S shape of the SLL energy curve v. temperature is probably a result of acceptor impurities localised in AlInAs at the interface (on edge impurities). The band offsets were determined by solving the Schrödinger and Poisson equations with a self consistent calculation program. At 4.5 K, the conduction and valence hand offsets are 0.384 and 0.295 eV respectively. Their temperature variation is shown to be important: 35 and 23 meV at 4.5 and 300 K respectively. The Van Vechten and Malloy model (following a thermodynamic approach) for the temperature variation of the band offsets is compared to the results in the present work.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets</title><author><name sortKey="Abraham, P" uniqKey="Abraham P">P. Abraham</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Physico Chimie Minérale</s1><s2>Villeurbanne</s2><s3>FRA</s3><sZ>1 aut.</sZ></inist:fA14><country>France</country><placeName><region type="région" nuts="2">Rhône-Alpes</region><settlement type="city">Villeurbanne</settlement><settlement type="city" wicri:auto="agglo">Lyon</settlement></placeName></affiliation></author><author><name sortKey="Garcia Perez, M A" uniqKey="Garcia Perez M">M. A. Garcia Perez</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire de Physique de la Matiére</s1><s2>Villeurbanne</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="région" nuts="2">Rhône-Alpes</region><settlement type="city">Villeurbanne</settlement><settlement type="city" wicri:auto="agglo">Lyon</settlement></placeName></affiliation></author><author><name sortKey="Benyattou, T" uniqKey="Benyattou T">T. Benyattou</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire de Physique de la Matiére</s1><s2>Villeurbanne</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="région" nuts="2">Rhône-Alpes</region><settlement type="city">Villeurbanne</settlement><settlement type="city" wicri:auto="agglo">Lyon</settlement></placeName></affiliation></author><author><name sortKey="Guillot, G" uniqKey="Guillot G">G. Guillot</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire de Physique de la Matiére</s1><s2>Villeurbanne</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="région" nuts="2">Rhône-Alpes</region><settlement type="city">Villeurbanne</settlement><settlement type="city" wicri:auto="agglo">Lyon</settlement></placeName></affiliation></author><author><name sortKey="Sacilotti, M" uniqKey="Sacilotti M">M. Sacilotti</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institut Universitaire de Technologie-GMP et Physique du Solide, Université de Bourgogne</s1><s2>Dijon</s2><s3>FRA</s3><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="région">Bourgogne</region><settlement type="city">Dijon</settlement></placeName></affiliation></author><author><name sortKey="Letartre, X" uniqKey="Letartre X">X. Letartre</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Laboratoire d'Electronique, Ecole Centrale de Lyon</s1><s2>Ecully</s2><s3>FRA</s3><sZ>6 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>Ecully</wicri:noRegion><wicri:noRegion>Ecole Centrale de Lyon</wicri:noRegion><wicri:noRegion>Ecully</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0024924</idno><date when="1998">1998</date><idno type="stanalyst">PASCAL 99-0024924 INIST</idno><idno type="RBID">Pascal:99-0024924</idno><idno type="wicri:Area/Main/Corpus">015D08</idno><idno type="wicri:Area/Main/Repository">016643</idno></publicationStmt><seriesStmt><idno type="ISSN">0267-0836</idno><title level="j" type="abbreviated">Mater. sci. technol.</title><title level="j" type="main">Materials science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acceptor center</term><term>Aluminium arsenides</term><term>Band offset</term><term>Band structure</term><term>Binary compounds</term><term>Experimental study</term><term>Impurities</term><term>Indium phosphides</term><term>Photoluminescence</term><term>Poisson equation</term><term>S shape</term><term>Schroedinger equation</term><term>Self consistency</term><term>Solid-solid interfaces</term><term>Temperature dependence</term><term>Ternary compounds</term><term>Thermodynamic model</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term><term>Discontinuité bande</term><term>Structure bande</term><term>Forme en S</term><term>Impureté</term><term>Centre accepteur</term><term>Interface solide solide</term><term>Dépendance température</term><term>Equation Poisson</term><term>Equation Schrödinger</term><term>Autocohérence</term><term>Modèle thermodynamique</term><term>Indium phosphure</term><term>Aluminium arséniure</term><term>Composé ternaire</term><term>Composé binaire</term><term>Etude expérimentale</term><term>7855C</term><term>7866F</term><term>AlInAs</term><term>Al As In</term><term>InP</term><term>IN P</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The temperature variations of the AlInAs photoluminescence (PL) transition energies and the AlInAs/InP interface staggered lineup luminescence (SLL) energy are reported. The S shape appearing from 4 to 90 K on the energy v. temperature curves of these PL energies are owing to extrinsic recombinations. In particular, the S shape of the SLL energy curve v. temperature is probably a result of acceptor impurities localised in AlInAs at the interface (on edge impurities). The band offsets were determined by solving the Schrödinger and Poisson equations with a self consistent calculation program. At 4.5 K, the conduction and valence hand offsets are 0.384 and 0.295 eV respectively. Their temperature variation is shown to be important: 35 and 23 meV at 4.5 and 300 K respectively. The Van Vechten and Malloy model (following a thermodynamic approach) for the temperature variation of the band offsets is compared to the results in the present work.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0267-0836</s0></fA01><fA02 i1="01"><s0>MSCTEP</s0></fA02><fA03 i2="1"><s0>Mater. sci. technol.</s0></fA03><fA05><s2>14</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets</s1></fA08><fA11 i1="01" i2="1"><s1>ABRAHAM (P.)</s1></fA11><fA11 i1="02" i2="1"><s1>GARCIA PEREZ (M. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>BENYATTOU (T.)</s1></fA11><fA11 i1="04" i2="1"><s1>GUILLOT (G.)</s1></fA11><fA11 i1="05" i2="1"><s1>SACILOTTI (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>LETARTRE (X.)</s1></fA11><fA14 i1="01"><s1>Laboratoire de Physico Chimie Minérale</s1><s2>Villeurbanne</s2><s3>FRA</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratoire de Physique de la Matiére</s1><s2>Villeurbanne</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Institut Universitaire de Technologie-GMP et Physique du Solide, Université de Bourgogne</s1><s2>Dijon</s2><s3>FRA</s3><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>Laboratoire d'Electronique, Ecole Centrale de Lyon</s1><s2>Ecully</s2><s3>FRA</s3><sZ>6 aut.</sZ></fA14><fA20><s1>1291-1294</s1></fA20><fA21><s1>1998</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>20742</s2><s5>354000073181250160</s5></fA43><fA44><s0>0000</s0><s1>© 1999 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>99-0024924</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Materials science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The temperature variations of the AlInAs photoluminescence (PL) transition energies and the AlInAs/InP interface staggered lineup luminescence (SLL) energy are reported. The S shape appearing from 4 to 90 K on the energy v. temperature curves of these PL energies are owing to extrinsic recombinations. In particular, the S shape of the SLL energy curve v. temperature is probably a result of acceptor impurities localised in AlInAs at the interface (on edge impurities). The band offsets were determined by solving the Schrödinger and Poisson equations with a self consistent calculation program. At 4.5 K, the conduction and valence hand offsets are 0.384 and 0.295 eV respectively. Their temperature variation is shown to be important: 35 and 23 meV at 4.5 and 300 K respectively. The Van Vechten and Malloy model (following a thermodynamic approach) for the temperature variation of the band offsets is compared to the results in the present work.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Discontinuité bande</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Band offset</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Discontinuidad banda</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Structure bande</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Band structure</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Forme en S</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>S shape</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Forma de una S</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Impureté</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Impurities</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Centre accepteur</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Acceptor center</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Centro aceptor</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Interface solide solide</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Solid-solid interfaces</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Dépendance température</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Equation Poisson</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Poisson equation</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Equation Schrödinger</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Schroedinger equation</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Autocohérence</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Self consistency</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Autocoherencia</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Modèle thermodynamique</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Thermodynamic model</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Aluminium arséniure</s0><s2>NK</s2><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Composé binaire</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Binary compounds</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>18</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Experimental study</s0><s5>18</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>AlInAs</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Al As In</s0><s4>INC</s4><s5>93</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>94</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>IN P</s0><s4>INC</s4><s5>95</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>17</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>17</s5></fC07><fN21><s1>011</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Materials for Microelectronics</s1><s2>1</s2><s3>Barcelona ESP</s3><s4>1994-10-17</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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